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IBM OHLÁSILA NEJRYCHLEJŠÍ KŘEMÍKOVÝ TRANZISTOR NA SVĚTĚ
Praha, 28. 6. 2001 - Společnost IBM oznámila, že vyrobila dosud nejrychlejší křemíkový tranzistor na světě, který se stane základem při stavbě nových mikroprocesorů.
IBM očekává, že díky tomuto novému tranzistoru budou do dvou let pracovat procesory na frekvenci 100 GHz, což je pětkrát vyšší rychlost a o čtyři roky kratší doba, než ohlásila konkurence.
Tranzistor používá nově upravený design a osvědčené IBM technologie spočívající v použití křemíku a germania, které v budoucnu umožní dosáhnout frekvence až 210 GHz, při relativně nízké spotřebě. Nový tranzistor tak má o 80 procent vyšší výkon a o 50 procent nižší spotřebu, než tomu bylo doposud.
Více informací najdete na: www.chips.ibm.com nebo v původní tiskové zprávě.
Zpráva v původním znění:
IBM TODAY ANNOUNCED IT HAS BUILT THE WORLD"S FASTEST SILICON-BASED TRANSISTOR, A BASIC BUILDING BLOCK USED TO MAKE MICROCHIPS
IBM expects the new transistor will drive communications chips to speeds of 100GHz within two years -- five times faster and four years sooner than recently-announced competitive approaches. Top-tier communications equipment makers are already working with the new IBM technology to help build faster, more efficient products to increase the speed of today"s networks.
The transistor uses a modified design and IBM"s proven silicon germanium (SiGe) technology to reach speeds of 210 GigaHertz (GHz) while drawing just a milli-amp of electrical current. This represents an 80 percent performance improvement and a 50 percent reduction in power consumption over current designs.
"Just as aircraft were once believed incapable of breaking an imaginary "sound barrier", silicon-based transistors were once thought incapable of breaking a 200GHz speed barrier," said Bernard Meyerson, IBM Fellow and vice president, IBM Communications Research and Development Centre. "Makers of high performance electronics like networking gear are no longer forced to use chips made of exotic and expensive materials to reach these speeds. Silicon"s future is safe as the preferred medium for chip-making."
Transistor speeds are largely determined by how quickly electricity passes through them. This is dependent on the material the transistor is made of and the distance electricity must travel through it. Standard transistors are made of ordinary silicon. In 1989, IBM introduced an improvement to the basic silicon material by adding germanium to greatly speed the electrical flow, improving performance and reducing power consumption. With this latest achievement, IBM is combining the use of the SiGe material with an improved transistor design that shortens the electrical path to speed up the device.
In standard transistors, electricity travels horizontally, so shortening the path requires that the transistor be made thinner -- an increasingly difficult task with diminishing returns using today"s chip manufacturing techniques. The IBM SiGe device is called a - heterojunction bipolar transistor - (HBT), an alternate transistor design in which electrical flow is vertical. In IBM"s SiGe manufacturing process, the height of the transistor is more easily reduced by thinning the SiGe layer, shortening the path of electrical flow and improving performance.
This announcement represents a new plateau for SiGe. More importantly, it opens the door to new levels of performance, particularly in the never-ending race to improve networking gear to handle the growing needs of the Internet and e-business. An added advantage of IBM"s SiGe technology is that SiGe chips can be built on existing manufacturing lines, which is critical in allowing the technology to be introduced rapidly and at minimal cost. This has expanded the use of SiGe technology for extending functions and battery life in cellular phones and other wireless communications products as well.
This advancement in SiGe technology is the latest in a string of chip materials improvements from IBM, continuing the technology leadership established with IBM firsts in the use of copper to replace aluminum wires, improved "low-k insulation" between wires and increased transistor performance through silicon-on-insulator (SOI) and strained silicon technologies.
IBM is currently working with dozens of communications companies to incorporate SiGe into an array of products, using state-of-the-art IBM design centres in Waltham, MA, East Fishkill, N.Y. and Encinitas, Calif. In the U.S., and at LaGaude, France.
O společnosti IBM
Společnost IBM je největším výrobcem produktů a poskytovatelem služeb informačních technologií na světě, s více než osmdesátiletou tradicí v inovacích, které mění náš svět. Převažující činností IBM ČR je prodej širokého spektra IT technologií, tedy všech typů počítačů, zálohovacích a komunikačních systémů, a to včetně programového vybavení a služeb.
K hlavním cílům IBM patří poskytování komplexních služeb systémového integrátora a prosazování výhod elektronického obchodu do každodenního života.
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Pro další informace kontaktujte:
PR agentura AETNA
Marek Hadra
PR manager
Údolní 60, 602 00 Brno
Tel.: 05/43 42 78 30, Fax: 05/43 42 78 37
e-mail: hadra@aetna.cz
IBM Česká republika
Monika Pavlíčková
Ředitelka marketingu a komunikací
Murmanská 4, 100 00 Praha 10
Tel.: 02/7213 1315, Fax: 02/7213 1566
e-mail: monika_pavlickova@cz.ibm.com
IBM OHLÁSILA NEJRYCHLEJŠÍ KŘEMÍKOVÝ TRANZISTOR NA SVĚTĚ
Praha, 28. 6. 2001 - Společnost IBM oznámila, že vyrobila dosud nejrychlejší křemíkový tranzistor na světě, který se stane základem při stavbě nových mikroprocesorů.IBM očekává, že díky tomuto novému tranzistoru budou do dvou let pracovat procesory na frekvenci 100 GHz, což je pětkrát vyšší rychlost a o čtyři roky kratší doba, než ohlásila konkurence.
Tranzistor používá nově upravený design a osvědčené IBM technologie spočívající v použití křemíku a germania, které v budoucnu umožní dosáhnout frekvence až 210 GHz, při relativně nízké spotřebě. Nový tranzistor tak má o 80 procent vyšší výkon a o 50 procent nižší spotřebu, než tomu bylo doposud.
Více informací najdete na: www.chips.ibm.com nebo v původní tiskové zprávě.
Zpráva v původním znění:
IBM TODAY ANNOUNCED IT HAS BUILT THE WORLD"S FASTEST SILICON-BASED TRANSISTOR, A BASIC BUILDING BLOCK USED TO MAKE MICROCHIPS
IBM expects the new transistor will drive communications chips to speeds of 100GHz within two years -- five times faster and four years sooner than recently-announced competitive approaches. Top-tier communications equipment makers are already working with the new IBM technology to help build faster, more efficient products to increase the speed of today"s networks.
The transistor uses a modified design and IBM"s proven silicon germanium (SiGe) technology to reach speeds of 210 GigaHertz (GHz) while drawing just a milli-amp of electrical current. This represents an 80 percent performance improvement and a 50 percent reduction in power consumption over current designs.
"Just as aircraft were once believed incapable of breaking an imaginary "sound barrier", silicon-based transistors were once thought incapable of breaking a 200GHz speed barrier," said Bernard Meyerson, IBM Fellow and vice president, IBM Communications Research and Development Centre. "Makers of high performance electronics like networking gear are no longer forced to use chips made of exotic and expensive materials to reach these speeds. Silicon"s future is safe as the preferred medium for chip-making."
Transistor speeds are largely determined by how quickly electricity passes through them. This is dependent on the material the transistor is made of and the distance electricity must travel through it. Standard transistors are made of ordinary silicon. In 1989, IBM introduced an improvement to the basic silicon material by adding germanium to greatly speed the electrical flow, improving performance and reducing power consumption. With this latest achievement, IBM is combining the use of the SiGe material with an improved transistor design that shortens the electrical path to speed up the device.
In standard transistors, electricity travels horizontally, so shortening the path requires that the transistor be made thinner -- an increasingly difficult task with diminishing returns using today"s chip manufacturing techniques. The IBM SiGe device is called a - heterojunction bipolar transistor - (HBT), an alternate transistor design in which electrical flow is vertical. In IBM"s SiGe manufacturing process, the height of the transistor is more easily reduced by thinning the SiGe layer, shortening the path of electrical flow and improving performance.
This announcement represents a new plateau for SiGe. More importantly, it opens the door to new levels of performance, particularly in the never-ending race to improve networking gear to handle the growing needs of the Internet and e-business. An added advantage of IBM"s SiGe technology is that SiGe chips can be built on existing manufacturing lines, which is critical in allowing the technology to be introduced rapidly and at minimal cost. This has expanded the use of SiGe technology for extending functions and battery life in cellular phones and other wireless communications products as well.
This advancement in SiGe technology is the latest in a string of chip materials improvements from IBM, continuing the technology leadership established with IBM firsts in the use of copper to replace aluminum wires, improved "low-k insulation" between wires and increased transistor performance through silicon-on-insulator (SOI) and strained silicon technologies.
IBM is currently working with dozens of communications companies to incorporate SiGe into an array of products, using state-of-the-art IBM design centres in Waltham, MA, East Fishkill, N.Y. and Encinitas, Calif. In the U.S., and at LaGaude, France.
O společnosti IBM
Společnost IBM je největším výrobcem produktů a poskytovatelem služeb informačních technologií na světě, s více než osmdesátiletou tradicí v inovacích, které mění náš svět. Převažující činností IBM ČR je prodej širokého spektra IT technologií, tedy všech typů počítačů, zálohovacích a komunikačních systémů, a to včetně programového vybavení a služeb.
K hlavním cílům IBM patří poskytování komplexních služeb systémového integrátora a prosazování výhod elektronického obchodu do každodenního života.
###
Pro další informace kontaktujte:
PR agentura AETNA
Marek Hadra
PR manager
Údolní 60, 602 00 Brno
Tel.: 05/43 42 78 30, Fax: 05/43 42 78 37
e-mail: hadra@aetna.cz
IBM Česká republika
Monika Pavlíčková
Ředitelka marketingu a komunikací
Murmanská 4, 100 00 Praha 10
Tel.: 02/7213 1315, Fax: 02/7213 1566
e-mail: monika_pavlickova@cz.ibm.com
